Functional safety is arguably the most critical factor when it comes to developing automobiles where safety is a top priority, and it has become even more important with the introduction of driver assistance or automatic driving systems. In line with these trends, ISO 26262, an international standard for functional safety of electrical and electronic systems in automobiles, was first established in 2011. While the standard has been applied to automobile development by major OEMs around the world since then, there has been a rising demand in the market to reflect additional technical characteristics in the existing standard. There have particularly been a number of problems in applying the standard to the development of semiconductor components, as semiconductor manufacturers lacked the proper understanding of functional safety of automobiles. In order to address this, a revised standard was announced at the end of 2018 after being worked on for four years.

In this presentation, Dr. Kih discusses the changes observed in the 2nd edition of ISO 26262 and their significance. What is particularly notable is that Part 11 was added to the revised edition under the title, “Guidelines on application of ISO 26262 to semiconductors.” The concepts, safety analysis, failure mode, failure rate estimation, etc. necessary for developing semiconductor components in consideration of functional safety are described in the added part, and Dr. Kih goes over them and discusses the foreseeable issues in his presentation.

Professor Hoon-kyu Shin obtained his bachelor’s, master’s, and doctorate degree in electrical engineering from Dong-A University and Pusan National University in 1993, 1995, and 1999, respectively. He worked as a researcher at the Electrical Technology Research Institute of AIST in Japan from 1997 to 1999, CIPMS at Dong-a University in Korea from 1999 to 2006, and at the Department of Chemistry at the University of Houston in the United States from 2005 to 2006. Then, from 2006 to 2017, he served as a professor at the National Institute for Nanomaterials Technology and a professor of advanced materials and science at a graduate school. Since 206, Professor Shin has been holding a concurrent position as the vice president of the National Institute for Nanomaterials Technology at POSTECH as well as the POSTECH-Fraunhofer IISB Joint Research (GRDC). His current areas of interest when it comes research include molecular electronics, organic inorganic interface at the molecular scale, scanning probe microscope, self-assembly tomography, LB film, and flexible OLED and SiC materials and devices. He has written five books, published 95 papers in academic journals, and given presentations at more than 230 conferences.

1. FINFET, boasting low power consumption and outstanding performance, is rapidly replacing the conventional planar type MOSFETs in consumer applications in the electronics industry. Some studies have shown that FINFETs may be more resistant against the total ionization dose (TID) effect, as the effect of charge trapping on buried oxide (BOX) is negligible due to excellent electrostatic control by the gate. Plus, FINFET can reduce single event effects (SEE) as a result of reduced charge collection by its thin body. Nevertheless, even though the FINFET has a narrow fin structure, the severity of the TID effect on the short channel structure has been report. Also, in the case of SOI FINFET with a floating body, a single event transient (SET) caused by parasitic polar amplification due to ionization current of energy particles is also a major area of interest.

2. At the conference, the effects of γ-ray irradiation on the FINFET short-channel effect (SCE) will be tested for various pin widths and channel lengths, and with respect to the operation of other effects in NMOS and PMOS devices, the results of analysis using three-dimensional (3-D) TCAD simulations are shared. Plus, the physical interpretation of the effect of ionizing radiation on SCE in FINFET are examined, and the basic physics of the TID effect in relation to FinFETs and a physical model of ionization current amplified by parasitic BJT are used to provide an insight into the circuit design with resistance against SET and to discuss measure to ensure reliable circuit operation.

Woo-joon Lee, a senior researcher at the Korea Aerospace Research Institute, provides product assurance for the parts built into man-made satellites by verifying reliability and space radiation characteristics of aerospace electrical and electronic parts and semiconductors. He is currently responsible for a project on developing semiconductor soft error testing methods using a domestic accelerator. He has published a number of papers and holds US patents on semiconductor technology. At the conference, Lee talks about GCR, SPE, and Van Allen Belt, which are sources of space radiation, and introduce ways to predict the space radiation environment. He also discusses the method of testing soft errors on Earth by simulating space radiation. The test method applied is based on international standards. Plus, the space environment information, results of the test on Earth, and characteristics of the target part are combined to calculate the frequency of soft errors in the space environment. Lastly, the cases of performing testing on Earth by applying the above process are introduced.

<Key Matters>

• Predictions for the Space Radiation Environment
• Space Radiation Simulation and Soft Error Test on Earth
• Calculation of the Frequency of Errors by Combining Information on the Space Environment/Ground Test Results/Part Characteristics
• Case of Testing Soft Errors in Semiconductors for Space Use on Earth
• (Woo-jin Lee, Senior Researcher_KARI)

Sung Chung has been CTO at QRT Inc. Korea since May 2017 with responsibilituy of leading R&D team: developoing new market segment through technical marketing and creating new solutions for ISO 26262 Automotive Functional Safety Standard. Mr. Sung Joined the companyu after spending 35+ years in Silicon Vallery. Sung Chung been CTO at QRT Inc. Korea since May 2017 with responsibility of leading R&D team; developing new market segment through technical marketing and creating new solutions for ISO 26262 Automotive Functional Safety Standard. Mr. Sung joined the company after spending 35+ yeare in silicon Valley.
Before joining QRT Inc. Korea, Chung served varioius positions at cisco System where he spent 14+ years. During his stay at Cisco Systems. Chung developed companyeide SEU mitigation process. had responsibiltiy of he developed AC JTAG, and it became a IEEE Std. 1149.6~2003 - IEEE Standard for Bundary-Scan Testing of aDvanced Digital Networks. Chung also participated various IEEE Test and JEDEC SEU Standard activities as a working group member.
Mr. Chung received a Master of Science Degrre in EE from Florda Institur of Technology. Mellbourne FL. USA. He Published over 40+ technical papers/pressntations on DFT, Boundary-Scan, BIST, and SEU. He holds 20US and Korean Patent in the field of test and DFT. Sung is a Life Member of IEEE. Currently. he Lives in Korea and speaks fluent English and Korean